GAN=MOS
RegisteredWord Mark
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Ownership
CM
Address
5F, No.11, Park Ave II, Sci & Indus Park
Hsinchu, 300
TW
Critical Dates
First Use Date
May 22, 2024
Filing Date
Oct 29, 2021
Registration Date
Aug 27, 2024
Mark Descriptions
Goods
Class 9
Integrated circuits; integrated circuit modules; integrated circuits and integrated circuit modules for power supplies, power adaptors, power converters, electric motors, battery chargers, charging stations and rectifiers; electronic circuits; electronic components and devices in the nature of integrated circuits and transistors
Mark Elements
Text Mark
GAN=MOS
Category
Trademark
Standard Characters
No
Color Claim
No
Pseudo Mark
GAN EQUALS MOS · GALLIUM NITRIDE EQUALS METAL OXIDE SEMICONDUCTOR
Trademark Timeline
Filing Date
Publication Date
First Use
Registration Date
USPTO Records
No documents found for this trademark.